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| AP09N70R-A Pb Free Plating Product Advanced Power Electronics Corp. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement RoHS Compliant G DD N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650V 0.75 9A G SS Description AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G D S TO-262(R) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 30 9 5 40 156 1.25 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 305 9 9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.8 62 Unit /W /W 200705053-1/6 Data & specifications subject to change without notice AP09N70R-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 650 2 - Typ. 0.6 4.5 44 11 12 19 21 56 24 2660 170 10 Max. Units 0.75 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=4.5A VDS=VGS, ID=250uA VDS=10V, ID=4.5A VDS=650V, VGS=0V VDS=520V, VGS=0V VGS=30V ID=9A VDS=480V VGS=10V VDD=300V ID=9A RG=10,VGS=10V RD=34 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=6.8mH , RG=25 , IAS=9A. Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V 1 Min. - Typ. - Max. Units 9 40 1.5 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25, IS=9A, VGS=0V 3.Pulse width <300us , duty cycle <2%. 2/4 AP09N70R-A 10 10 T C =25 o C 8 ID , Drain Current (A) ID , Drain Current (A) 10V 6.0V 5.0V T C =150 C 8 o 10V 6.0V 5.0V 4.5V 6 6 4 4 4.5V 2 4.0V 2 4.0V V G = 3 .5 V 0 0 3 6 9 12 0 V G = 3 .5 V 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 Normalized BVDSS (V) 1.1 I D =4.5A V G =10V Normalized RDS(ON) 2 1 1 0.9 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 100 5 Fig 4. Normalized On-Resistance v.s. Junction Temperature 4 10 IS (A) T j = 150 o C o T j = 25 C VGS(th) (V) 3 1 2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP09N70R-A f=1.0MHz 16 10000 VGS , Gate to Source Voltage (V) I D =9A 12 C iss V DS =320V V DS =400V V DS =480V 8 C (pF) C oss 100 4 C rss 0 1 0 20 40 60 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 10 10us 100us 1ms 0.2 0.1 ID (A) 0.1 0.05 1 0.02 PDM T c =25 C Single Pulse o 10ms 100ms t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.1 1 10 100 1000 10000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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